GSDR10025I Datasheet, Equivalent, Cross Reference Search

Type Designator: GSDR10025I

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 25 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .