GSDS50018 Specs and Replacement

Type Designator: GSDS50018

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 180 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO3

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GSDS50018 datasheet

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Detailed specifications: GSDR10020, GSDR10020I, GSDR10025, GSDR10025I, GSDR15020, GSDR15020I, GSDR15025, GSDR15025I, 2SD669, GSDS50020, GSDU7530, GSDU7535, GSDU7540, GSH9012, GSH9012D, GSH9012E, GSH9012F

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