GT109V Specs and Replacement

Type Designator: GT109V

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.03 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 6 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 80 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

 GT109V Substitution

- BJT ⓘ Cross-Reference Search

 

GT109V datasheet

 9.1. Size:462K  russia

gt109a-b-v-g-d-e-zh-i.pdf pdf_icon

GT109V

... See More ⇒

Detailed specifications: GT108V, GT109A, GT109B, GT109D, GT109E, GT109G, GT109I, GT109J, BD135, GT115A, GT115B, GT115D, GT115G, GT115V, GT1201, GT1202, GT122A

Keywords - GT109V pdf specs

 GT109V cross reference

 GT109V equivalent finder

 GT109V pdf lookup

 GT109V substitution

 GT109V replacement