All Transistors. GT125G Datasheet

 

GT125G Datasheet, Equivalent, Cross Reference Search


   Type Designator: GT125G
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -

 GT125G Transistor Equivalent Substitute - Cross-Reference Search

   

GT125G Datasheet (PDF)

 9.1. Size:414K  russia
 gt125a-b-v-g-d-e-zh-i-k-l.pdf

GT125G

 9.2. Size:3940K  goford
 gt125n10t gt125n10m gt125n10f.pdf

GT125G GT125G

GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: CFD1499 | CDQ10002

 

 
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