All Transistors. GT125G Datasheet

 

GT125G Datasheet and Replacement


   Type Designator: GT125G
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
 

 GT125G Substitution

   - BJT ⓘ Cross-Reference Search

   

GT125G Datasheet (PDF)

 9.1. Size:414K  russia
 gt125a-b-v-g-d-e-zh-i-k-l.pdf pdf_icon

GT125G

 9.2. Size:3940K  goford
 gt125n10t gt125n10m gt125n10f.pdf pdf_icon

GT125G

GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu

Datasheet: GT124A , GT124B , GT124G , GT124V , GT125A , GT125B , GT125D , GT125E , BC556 , GT125I , GT125J , GT125K , GT125L , GT125V , GT150-10 , GT150-3 , GT150-4 .

History: C106 | BC438A | MPSW01A | 2SAR513P5 | FQ3724 | TI460 | 2N3865

Keywords - GT125G transistor datasheet

 GT125G cross reference
 GT125G equivalent finder
 GT125G lookup
 GT125G substitution
 GT125G replacement

 

 
Back to Top

 


 
.