All Transistors. GT125J Datasheet

 

GT125J Datasheet, Equivalent, Cross Reference Search


   Type Designator: GT125J
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 71
   Noise Figure, dB: -

 GT125J Transistor Equivalent Substitute - Cross-Reference Search

   

GT125J Datasheet (PDF)

 9.1. Size:414K  russia
 gt125a-b-v-g-d-e-zh-i-k-l.pdf

GT125J

 9.2. Size:3940K  goford
 gt125n10t gt125n10m gt125n10f.pdf

GT125J GT125J

GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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