All Transistors. GT125J Datasheet

 

GT125J Datasheet and Replacement


   Type Designator: GT125J
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 71
   Noise Figure, dB: -
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GT125J Datasheet (PDF)

 9.1. Size:414K  russia
 gt125a-b-v-g-d-e-zh-i-k-l.pdf pdf_icon

GT125J

 9.2. Size:3940K  goford
 gt125n10t gt125n10m gt125n10f.pdf pdf_icon

GT125J

GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: SGS136 | ZX5T853G | 2SC1353 | CMLT4413 | UNR221L | 2N2217-51 | DTD114E

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