GT250-10C Specs and Replacement
Type Designator: GT250-10C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 900 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 160 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 50
Package: XM37
GT250-10C Substitution
- BJT ⓘ Cross-Reference Search
GT250-10C datasheet
NO PDF data!
Detailed specifications: GT1606, GT1607, GT1608, GT1609, GT1644, GT200, GT250-10A, GT250-10B, D882P, GT250-10D, GT250-3A, GT250-3B, GT250-3C, GT250-3D, GT250-4A, GT250-4B, GT250-4C
Keywords - GT250-10C pdf specs
GT250-10C cross reference
GT250-10C equivalent finder
GT250-10C pdf lookup
GT250-10C substitution
GT250-10C replacement
