GT250-10D Specs and Replacement

Type Designator: GT250-10D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 770 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 125 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: XM37

 GT250-10D Substitution

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GT250-10D datasheet

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Detailed specifications: GT1607, GT1608, GT1609, GT1644, GT200, GT250-10A, GT250-10B, GT250-10C, BD136, GT250-3A, GT250-3B, GT250-3C, GT250-3D, GT250-4A, GT250-4B, GT250-4C, GT250-4D

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