1501 Datasheet, Equivalent, Cross Reference Search

Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015. . . PowerBase complementary transistors designed

Order this documentMOTOROLAby MJ15011/DSEMICONDUCTOR TECHNICAL DATANPNMJ15011*Advance InformationPNPMJ15012*Complementary Silicon PowerTransistors*Motorola Preferred DeviceThe

Order this documentMOTOROLAby MJ15018/DSEMICONDUCTOR TECHNICAL DATAMJ15015, MJ15016(See 2N3055A)NPNAdvance InformationMJ15018Complementary Silicon PowerMJ15020*TransistorsPNP

RN1501RN1506 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1501,RN1502,RN1503 RN1504,RN1505,RN1506 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

PBLS1501Y; PBLS1501V15 V PNP BISS loadswitchRev. 02 24 August 2009 Product data sheet1. Product profile1.1 General descriptionLow VCEsat PNP transistor and NPN resistor-equipped transistor in one package.Table 1. Product overviewType number PackageNXP JEITAPBLS1501Y SOT363 SC-88PBLS1501V SOT666 -1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transist

Si1501DLVishay SiliconixComplementary 20-V (D-S) Low-Threshold MOSFETPRODUCT SUMMARYChannel VDS (V) rDS(on) (W) ID (mA)2.0 @ VGS = 4.5 V 250N-Channel 20N-Channel 202.5 @ VGS = 2.5 V 1503.8 @ VGS = -4.5 V -180P Channel 20P-Channel -205.0 @ VGS = -2.5 V -100SOT-363SC-70 (6-Leads)Marking CodeS1 1 6 D1RE XXLot TraceabilityG1 2 5 G2and Date Code4 Part # Code

PTFB211501EPTFB211501FThermally-Enhanced High Power RF LDMOS FETs150 W, 2110 2170 MHzDescriptionThe PTFB211501E and PTFB211501F are thermally-enhanced,PTFB211501E150-watt, LDMOS FETs designed for cellular power amplifierPackage H-36248-2applications in the 2110 2170 frequency band. Features includeI/O matching, high gain, and thermally-enhanced ceramic open-cavityp

PTFB191501EPTFB191501FConfidential, Limited Internal DistributionThermally-Enhanced High Power RF LDMOS FETs150 W, 1930 1990 MHzDescriptionThe PTFB191501E and PTFB191501F are 150-watt LDMOS FETsPTFB191501Edesigned for single- and two-carrier WCDMA and CDMA applicationsPackage H-36248-2from 1930 to 1990 MHz. Features include input and output matching,and thermally-enhan

PTFA041501EPTFA041501FConfidential, Limited Internal DistributionThermally-Enhanced High Power RF LDMOS FETs150 W, 420 500 MHzDescriptionThe PTFA041501E and PTFA041501F are 150-watt LDMOS FETsPTFA041501Edesigned for ultra-linear CDMA power amplifier applications.Package H-36248-2They are available in thermally-enhanced ceramic open-cavitypackages . Manufactured with In

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

2N3055AG (NPN),MJ15015G (NPN),MJ15016G (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBase complementary transistors are designed for highpower audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orCOMPLEMENTARY SILICONsolenoid drivers, dc-to-dc converters, invert

MJ15011 (NPN),MJ15012 (PNP)Preferred DevicesComplementary SiliconPower TransistorsThe MJ15011 and MJ15012 are PowerBase power transistorsdesigned for high-power audio, disk head positioners, and other linearhttp://onsemi.comapplications. These devices can also be used in power switchingcircuits such as relay or solenoid drivers, dc-to-dc converters or 10 AMPEREinverters.CO

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

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AFN1501S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1501S, N-Channel enhancement mode 100V/60A,RDS(ON)= 6.4m@VGS=10V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely low provide excellent RDS(ON), low gate charge. RDS (ON) These devices are particularly suited for low voltage TO-220-

SM1501GSQH Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS2 20V/0.55A ,G2 RDS(ON)= 800m (max.) @ VGS=4.5VD1D2G1RDS(ON)= 1100m (max.) @ VGS=2.5VS1RDS(ON)= 1450m (max.) @ VGS=1.8VTop View of SOT-563 Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)(6)D1(3)D2 ESD Protection(2)(5)ApplicationsG1G2 Power Suppl

SMD Type ICSMD Type TransistorsComplementary 20-V (D-S) Low-Threshold MOSFETKI1501DLSOT-363Unit: mm+0.11.3-0.10.65PIN Configuration+0.1 +0.050.1-0.020.3-0.1+0.12.1-0.1Absolute Maximum Ratings TA = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 20 -20 VGate-Source Voltage VGS 8 8 VContinuous Drain Current (TJ = 150 )* TA =25 250 -180 mA

MDD1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6mGeneral Description Features The MDD1501 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 67.4A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1501 is suitable device for DC to DC

MDIS1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6mGeneral Description Features The MDIS1501 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 67.4A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDIS1501 is suitable device for DC to DC

HG RF POWER TRANSISTORMS1501SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeaturesFeatures 860 MHz POUT = 2 WATTS GP = 8.5 dB MINIMUM GOLD METALLIZATION CLASS A LINEAR OPERATION COMMON EMITTER CONFIGURATIONDESCRIPTION:DESCRIPTION:The MS1501 is a silicon NPN bipolar device specifically designed for high linearity applications in the

SE150180GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 150VDSlow operation voltage. This device is R =4.4m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline

SE150110GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =150VDSlow operation voltage. This device is R =6m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline

SE150180GTSN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 150VDSlow operation voltage. This device is R =4.8m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outlin

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJ15016DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = -4A,V = -4VFE C CECollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15015APPLICATIONSDesigned for high power audio, stepping motor and otherlinear applications, and can als

isc Silicon PNP Power Transistor MJ15016DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = -4A,V = -4VFE C CECollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15015Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, step

isc Silicon PNP Power Transistor MJ15012DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20(Min.)@I = -2AFE CCollector-Emitter Saturation Voltage-: V )= -2.5V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15011Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head pos

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1501 DESCRIPTION With TO-126 package High breakdown voltage Large power dissipation APPLICATIONS For medium power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base

isc Silicon NPN Power Transistor MJ15011DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 2.5V(Max)@ I = 4ACE(sat CComplement to the PNP MJ15012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positi

isc Silicon NPN Power Transistor MJ15015DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = 4A,V = 4VFE C CECollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to the PNP MJ15016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, stepping