GT250-9D Specs and Replacement

Type Designator: GT250-9D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 770 W

Maximum Collector-Base Voltage |Vcb|: 900 V

Maximum Collector-Emitter Voltage |Vce|: 900 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 125 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: XM37

 GT250-9D Substitution

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GT250-9D datasheet

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Detailed specifications: GT250-7D, GT250-8A, GT250-8B, GT250-8C, GT250-8D, GT250-9A, GT250-9B, GT250-9C, BD140, GT2693, GT2694, GT2695, GT2696, GT2765, GT2766, GT2767, GT2768

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