GT311V Specs and Replacement

Type Designator: GT311V

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 12 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 70 °C

Electrical Characteristics

Transition Frequency (ft): 450 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

 GT311V Substitution

- BJT ⓘ Cross-Reference Search

 

GT311V datasheet

 9.1. Size:1553K  russia

gt311e-zh-i 1t311a-b-v-g-d-k-l.pdf pdf_icon

GT311V

... See More ⇒

Detailed specifications: GT3110A-2, GT311A, GT311B, GT311D, GT311E, GT311G, GT311I, GT311J, S9013, GT313A, GT313B, GT313V, GT320A, GT320B, GT320V, GT321A, GT321B

Keywords - GT311V pdf specs

 GT311V cross reference

 GT311V equivalent finder

 GT311V pdf lookup

 GT311V substitution

 GT311V replacement