All Transistors. GT600 Datasheet

 

GT600 Datasheet, Equivalent, Cross Reference Search

Type Designator: GT600

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 85 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Collector Current |Ic max|: 60 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

GT600 Transistor Equivalent Substitute - Cross-Reference Search

 

GT600 Datasheet (PDF)

1.1. aptgt600u170d4.pdf Size:189K _apt

GT600
GT600

APTGT600U170D4 VCES = 1700V Single switch IC = 600A @ Tc = 80°C Trench IGBT® Power Module Application • Welding converters 1 • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 3 Features 5 • Trench + Field Stop IGBT® Technology - Low voltage drop 2 - Low tail current - Switching frequency up to 20 kHz - Soft recovery pa

1.2. aptgt600u120d4.pdf Size:188K _apt

GT600
GT600

APTGT600U120D4 VCES = 1200V Single switch IC = 600A @ Tc = 80°C Trench IGBT® Power Module Application • Welding converters 1 • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 3 Features 5 • Trench + Field Stop IGBT® Technology - Low voltage drop 2 - Low tail current - Switching frequency up to 20 kHz - Soft recovery pa

 

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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