GT806V Datasheet and Replacement
Type Designator: GT806V
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
GT806V Substitution
GT806V Datasheet (PDF)
Datasheet: GT8005 , GT804A , GT804B , GT804V , GT806A , GT806B , GT806D , GT806G , S8550 , GT81 , GT8100 , GT8101 , GT8102 , GT8103 , GT810A , GT811 , GT812 .
Keywords - GT806V transistor datasheet
GT806V cross reference
GT806V equivalent finder
GT806V lookup
GT806V substitution
GT806V replacement
History: 3DG2222 | KT661A



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc756 | oc44 transistor datasheet | 2sa1210 | 2sc3792 | mps2907a transistor equivalent | 2sc1626 | b560 transistor | 2sc632a