GT813V Specs and Replacement
Type Designator: GT813V
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
GT813V Substitution
- BJT ⓘ Cross-Reference Search
GT813V datasheet
NO PDF data!
Detailed specifications: GT8101, GT8102, GT8103, GT810A, GT811, GT812, GT813A, GT813B, 2SC2625, GT81H, GT81HS, GT82, GT83, GT87, GT88, GT901A, GT901B
Keywords - GT813V pdf specs
GT813V cross reference
GT813V equivalent finder
GT813V pdf lookup
GT813V substitution
GT813V replacement
