All Transistors. HEP637 Datasheet

 

HEP637 Datasheet and Replacement


   Type Designator: HEP637
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 800 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO72
 

 HEP637 Substitution

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HEP637 Datasheet (PDF)

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Datasheet: HA9532 , HA9532A , HA9532B , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , 2SD1555 , HEPG0001 , HEPG0002 , HEPG0003 , HEPG0005 , HEPG0006 , HEPG0007 , HEPG0008 , HEPG0009 .

History: 3N105 | TD367B | 2SB327

Keywords - HEP637 transistor datasheet

 HEP637 cross reference
 HEP637 equivalent finder
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