HEP637 PDF and Equivalents Search

HEP637 Specs and Replacement

Type Designator: HEP637

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 800 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO72

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HEP637 datasheet

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Detailed specifications: HA9532, HA9532A, HA9532B, HCT2907A, HCT2907M, HDA412, HDA420, HDA496, S9018, HEPG0001, HEPG0002, HEPG0003, HEPG0005, HEPG0006, HEPG0007, HEPG0008, HEPG0009

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