HEPS3032 Datasheet. Specs and Replacement

Type Designator: HEPS3032

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 140 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: SIPTAB

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HEPS3032 datasheet

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Detailed specifications: HEPS3010, HEPS3011, HEPS3012, HEPS3019, HEPS3020, HEPS3021, HEPS3024, HEPS3028, MJE340, HEPS3033, HEPS3034, HEPS3035, HEPS3047, HEPS3048, HEPS3049, HEPS3050, HEPS3051

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