HEPS3032 Datasheet and Replacement
Type Designator: HEPS3032
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SIPTAB
HEPS3032 Substitution
HEPS3032 Datasheet (PDF)
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Datasheet: HEPS3010 , HEPS3011 , HEPS3012 , HEPS3019 , HEPS3020 , HEPS3021 , HEPS3024 , HEPS3028 , 2SA1837 , HEPS3033 , HEPS3034 , HEPS3035 , HEPS3047 , HEPS3048 , HEPS3049 , HEPS3050 , HEPS3051 .
History: KRC653U
Keywords - HEPS3032 transistor datasheet
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History: KRC653U



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