HEPS5020 Datasheet and Replacement
Type Designator: HEPS5020
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 325 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3
HEPS5020 Substitution
HEPS5020 Datasheet (PDF)
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Datasheet: HEPS5006 , HEPS5011 , HEPS5012 , HEPS5013 , HEPS5014 , HEPS5015 , HEPS5018 , HEPS5019 , 2SB817 , HEPS5021 , HEPS5022 , HEPS5022R , HEPS5023 , HEPS5024 , HEPS5025 , HEPS5026 , HEPS5027 .
History: RT1P432S
Keywords - HEPS5020 transistor datasheet
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History: RT1P432S



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