HEPS5020 Datasheet. Specs and Replacement

Type Designator: HEPS5020

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 325 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 140 °C

Electrical Characteristics

Transition Frequency (ft): 2.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO3

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HEPS5020 datasheet

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Detailed specifications: HEPS5006, HEPS5011, HEPS5012, HEPS5013, HEPS5014, HEPS5015, HEPS5018, HEPS5019, S9013, HEPS5021, HEPS5022, HEPS5022R, HEPS5023, HEPS5024, HEPS5025, HEPS5026, HEPS5027

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