HEPS5022R Datasheet, Equivalent, Cross Reference Search

   Type Designator: HEPS5022R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 275 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO5

 HEPS5022R Transistor Equivalent Substitute - Cross-Reference Search

   

HEPS5022R Datasheet (PDF)

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