2N3812 Datasheet. Specs and Replacement
Type Designator: 2N3812 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Package: 610A-03
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2N3812 datasheet
2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features BVCEO 60 V IC (max) 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65 C to +200 C 1 2 3 4 6 5 Hi-Rel PNP dual matched bipolar transistor TO-78 LCC-6 Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiatio... See More ⇒
2N3819 N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 25 ... See More ⇒
2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v 8 25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mixer Gps 11 dB @ 400 MHz D Very High System Sensitivity D Oscillator D Very Low Noise 3 dB @ 400 MHz D High Quality of Amplification D Sample-a... See More ⇒
Detailed specifications: 2N381, 2N3810, 2N3810A, 2N3810DCSM, 2N3811, 2N3811A, 2N3811ADCSM, 2N3811DCSM, 2SA1837, 2N3813, 2N3814, 2N3815, 2N3816, 2N3816A, 2N3817, 2N3817A, 2N3818
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