HEPS7006 Datasheet and Replacement

   Type Designator: HEPS7006
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 750 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 7.5 MHz
   Noise Figure, dB: -
   Package: TO3
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