HF200 Specs and Replacement
Type Designator: HF200
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.03 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 320 MHz
Collector Capacitance (Cc): 1.3 pF
Forward Current Transfer Ratio (hFE), MIN: 8.5
Noise Figure, dB: -
HF200 Transistor Equivalent Substitute - Cross-Reference Search
HF200 detailed specifications
dahf200g120sb.pdf
DAHF200G120SB DACO SEMICONDUCTOR CO., LTD. IGBT Power Module 1200V / 200A Preliminary HDA-10662 A-10662 Features 62mm Fast Switching / Trench Field Stop IGBT Technology Low Switching Losses Super Fast Diodes High Short Circuit Capability Applications Welder / Power Supply Circuit Diagram Headline UPS / Inverter 6 Industrial Motor Drive 7 1 2 3 5 M... See More ⇒
Detailed specifications: HEPS9148 , HEPS9149 , HEPS9150 , HEPS9151 , HEPS9152 , HEPS9153 , HF0100 , HF100 , 2N5551 , HF8004 , HK100 , HL100 , HNT1T018 , HNT1T05 , HPA100R , HPA100R-2 , HPA100R-3 .
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