HPA251R Datasheet, Equivalent, Cross Reference Search

   Type Designator: HPA251R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 4
   Noise Figure, dB: -
   Package: TO3JML

HPA251R Transistor Equivalent Substitute - Cross-Reference Search