HS5812 Datasheet. Specs and Replacement
Type Designator: HS5812 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 135 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
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HS5812 Substitution
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HS5812 datasheet
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Detailed specifications: HS3404, HS3405, HS5306, HS5306A, HS5307, HS5308, HS5810, HS5811, BD335, HS5813, HS5814, HS5815, HS5816, HS5817, HS5818, HS5819, HS5820
Keywords - HS5812 pdf specs
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BJT Parameters and How They Relate
History: BD544 | MJE41 | HPT1210 | HS5307 | BD545B | HN1B01FU | MJE42
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