HS5815 Datasheet. Specs and Replacement
Type Designator: HS5815 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
📄📄 Copy
HS5815 Substitution
- BJT ⓘ Cross-Reference Search
HS5815 datasheet
NO PDF data!
Detailed specifications: HS5306A, HS5307, HS5308, HS5810, HS5811, HS5812, HS5813, HS5814, 2SA1837, HS5816, HS5817, HS5818, HS5819, HS5820, HS5821, HS5822, HS5823
Keywords - HS5815 pdf specs
HS5815 cross reference
HS5815 equivalent finder
HS5815 pdf lookup
HS5815 substitution
HS5815 replacement
BJT Parameters and How They Relate
History: 2SC5195 | BD544A | MJE371 | HSB857 | 2SA812H | HS5810 | HNT1T05
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
2n2222a transistor | irfp250 | irf640n datasheet | irf540 datasheet | irf530 | 2n3565 | irf530n | pn2222a datasheet
