2N3818 Datasheet. Specs and Replacement

Type Designator: 2N3818  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO62

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2N3818 datasheet

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2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features BVCEO 60 V IC (max) 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65 C to +200 C 1 2 3 4 6 5 Hi-Rel PNP dual matched bipolar transistor TO-78 LCC-6 Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiatio... See More ⇒

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2N3819 N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 25 ... See More ⇒

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2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v 8 25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mixer Gps 11 dB @ 400 MHz D Very High System Sensitivity D Oscillator D Very Low Noise 3 dB @ 400 MHz D High Quality of Amplification D Sample-a... See More ⇒

Detailed specifications: 2N3812, 2N3813, 2N3814, 2N3815, 2N3816, 2N3816A, 2N3817, 2N3817A, 2SD313, 2N382, 2N3825, 2N3826, 2N3827, 2N3828, 2N3829, 2N383, 2N3830

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