HSE830 Datasheet and Replacement

   Type Designator: HSE830
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 118 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO3
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