2N3835 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3835
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 1.7 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO50-2
2N3835 Transistor Equivalent Substitute - Cross-Reference Search
2N3835 Datasheet (PDF)
2n2857 2n3839.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3831.pdf
2N3831Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 40V dia.IC = 1.2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
2n3838 2n4854.pdf
TECHNICAL DATANPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified LevelJAN 2N4854 2N3838 JANTX 2N4854U JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage 40 40 VdcVCEO Collector-Base Voltage 60 60 VdcVCBO Emitter-Base Voltage 5.0 5.0 Vdc TO-78* VEBO 2N4854 Collector
Datasheet: 2N3829 , 2N383 , 2N3830 , 2N3830L , 2N3831 , 2N3832 , 2N3833 , 2N3834 , 13001-A , 2N3836 , 2N3837 , 2N3838 , 2N3839 , 2N384 , 2N3840 , 2N3841 , 2N3842 .
