2N3836 Datasheet. Specs and Replacement

Type Designator: 2N3836  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: X55-3

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2N3836 datasheet

 9.1. Size:62K  central

 2n2857 2n3839.pdf pdf_icon

2N3836

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

 9.2. Size:11K  semelab

 2n3831.pdf pdf_icon

2N3836

2N3831 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 40V dia. IC = 1.2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 ... See More ⇒

 9.3. Size:135K  microsemi

 2n3838 2n4854.pdf pdf_icon

2N3836

TECHNICAL DATA NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified Level JAN 2N4854 2N3838 JANTX 2N4854U JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage 40 40 Vdc VCEO Collector-Base Voltage 60 60 Vdc VCBO Emitter-Base Voltage 5.0 5.0 Vdc TO-78* VEBO 2N4854 Collector ... See More ⇒

Detailed specifications: 2N383, 2N3830, 2N3830L, 2N3831, 2N3832, 2N3833, 2N3834, 2N3835, D209L, 2N3837, 2N3838, 2N3839, 2N384, 2N3840, 2N3841, 2N3842, 2N3842A

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