All Transistors. 2N3836 Datasheet

 

2N3836 Datasheet and Replacement


   Type Designator: 2N3836
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: X55-3
      - BJT Cross-Reference Search

   

2N3836 Datasheet (PDF)

 9.1. Size:62K  central
 2n2857 2n3839.pdf pdf_icon

2N3836

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.2. Size:11K  semelab
 2n3831.pdf pdf_icon

2N3836

2N3831Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 40V dia.IC = 1.2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

 9.3. Size:135K  microsemi
 2n3838 2n4854.pdf pdf_icon

2N3836

TECHNICAL DATANPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified LevelJAN 2N4854 2N3838 JANTX 2N4854U JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage 40 40 VdcVCEO Collector-Base Voltage 60 60 VdcVCBO Emitter-Base Voltage 5.0 5.0 Vdc TO-78* VEBO 2N4854 Collector

Datasheet: 2N383 , 2N3830 , 2N3830L , 2N3831 , 2N3832 , 2N3833 , 2N3834 , 2N3835 , S9013 , 2N3837 , 2N3838 , 2N3839 , 2N384 , 2N3840 , 2N3841 , 2N3842 , 2N3842A .

History: 2SA1370D | 2N5821 | 2N3834 | 2N1457 | 2N142 | 2N5239 | 2N2642

Keywords - 2N3836 transistor datasheet

 2N3836 cross reference
 2N3836 equivalent finder
 2N3836 lookup
 2N3836 substitution
 2N3836 replacement

 

 
Back to Top

 


 
.