IMB2A Specs and Replacement
Type Designator: IMB2A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Package: SO6
IMB2A Substitution
- BJT ⓘ Cross-Reference Search
IMB2A datasheet
umb2n imb2a b2 sot363 sot23-6.pdf 
Transistors General purpose (dual digital transistors) UMB2N / IMB2A FFeatures FExternal dimensions (Units mm) 1) Two DTA144E chips in a UMT or SMT package. 2) Same size as UMT3 or SMT3 pack- age, so same mounting machine can be used for both. 3) Transistor elements are indepen- dent, eliminating interference. FStructure Epitaxial planar type PNP silicon transistor (Built-in res... See More ⇒
EMB2 / UMB2N / IMB2A Transistors General purpose (dual digital transistors) EMB2 / UMB2N / IMB2A External dimensions (Unit mm) Features 1) Two DTA144E chips in a EMT or UMT or SMT EMB2 package. (4) ( ) 3 (5) (2) 2) Same size as EMT3 or UMT3 or SMT3 package, so (6) ( ) 1 1.2 same mounting machine can be used for both. 1.6 3) Transistor elements are independent, ... See More ⇒
EMB2 / UMB2N / IMB2A EMB2FHA / UMB2NFHA / IMB2AFRA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 47kW EMB2 UMB2N EMB2FHA UMB2NFHA R2 47kW (SC-107C) SOT-353 (SC-88) SM... See More ⇒
Detailed specifications: IDI8003, IDI8004, IDI8005, IMB10A, IMB11A, IMB16, IMB17A, IMB1A, 2222A, IMB3A, IMB4A, IMB5A, IMB6A, IMB7A, IMB8A, IMB9A, IMBT3903
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