All Transistors. IMB2A Datasheet

 

IMB2A Datasheet and Replacement


   Type Designator: IMB2A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 68
   Noise Figure, dB: -
   Package: SO6
 

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IMB2A Datasheet (PDF)

 ..1. Size:62K  rohm
 umb2n imb2a b2 sot363 sot23-6.pdf pdf_icon

IMB2A

TransistorsGeneral purpose(dual digital transistors)UMB2N / IMB2AFFeatures FExternal dimensions (Units: mm)1) Two DTA144E chips in a UMT orSMT package.2) Same size as UMT3 or SMT3 pack-age, so same mounting machinecan be used for both.3) Transistor elements are indepen-dent, eliminating interference.FStructureEpitaxial planar typePNP silicon transistor(Built-in res

 ..2. Size:68K  rohm
 emb2 umb2n imb2a umb2n.pdf pdf_icon

IMB2A

EMB2 / UMB2N / IMB2A Transistors General purpose (dual digital transistors) EMB2 / UMB2N / IMB2A External dimensions (Unit : mm) Features 1) Two DTA144E chips in a EMT or UMT or SMT EMB2package. (4) ( )3(5) (2)2) Same size as EMT3 or UMT3 or SMT3 package, so (6) ( )11.2same mounting machine can be used for both. 1.63) Transistor elements are independent,

 0.1. Size:1340K  rohm
 emb2fha umb2nfha imb2afra.pdf pdf_icon

IMB2A

EMB2 / UMB2N / IMB2AEMB2FHA / UMB2NFHA / IMB2AFRADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R147kWEMB2 UMB2N EMB2FHA UMB2NFHAR247kW (SC-107C) SOT-353 (SC-88) SM

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: K2108B

Keywords - IMB2A transistor datasheet

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