IMB9A Specs and Replacement
Type Designator: IMB9A
SMD Transistor Code: B9
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SO6
IMB9A Substitution
- BJT ⓘ Cross-Reference Search
IMB9A datasheet
EMB9 / UMB9N / IMB9A Transistors General purpose (dual digital transistors) EMB9 / UMB9N / IMB9A Features External dimensions (Unit mm) 1) Two DTA144Ys in a EMT or UMT or SMT package. EMB9 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. (4) (3) (5) (2) 3) Transistor elements are independent, eliminating (6) (1) 1.2 interference. 1.6 4)... See More ⇒
umb9n imb9a b9 sot23-6 sot363.pdf 
Transistors General purpose (dual digital transistors) UMB9N / IMB9A FFeatures FExternal dimensions (Units mm) 1) Two DTA114Ys in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP silicon... See More ⇒
Detailed specifications: IMB1A, IMB2A, IMB3A, IMB4A, IMB5A, IMB6A, IMB7A, IMB8A, 2SC2240, IMBT3903, IMBT3904, IMBT3905, IMBT3906, IMBT4400, IMBT4401, IMBT4402, IMBT4403
Keywords - IMB9A pdf specs
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