IMB9A Datasheet, Equivalent, Cross Reference Search
Type Designator: IMB9A
SMD Transistor Code: B9
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SO6
IMB9A Transistor Equivalent Substitute - Cross-Reference Search
IMB9A Datasheet (PDF)
emb9 umb9n imb9a.pdf
EMB9 / UMB9N / IMB9A Transistors General purpose (dual digital transistors) EMB9 / UMB9N / IMB9A Features External dimensions (Unit : mm) 1) Two DTA144Ys in a EMT or UMT or SMT package. EMB92) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. (4) (3)(5) (2)3) Transistor elements are independent, eliminating (6) (1)1.2interference. 1.64)
umb9n imb9a b9 sot23-6 sot363.pdf
TransistorsGeneral purpose(dual digital transistors)UMB9N / IMB9AFFeatures FExternal dimensions (Units: mm)1) Two DTA114Ys in a UMT or SMTpackage.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typePNP silicon
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2SD1263
