IR4026 Specs and Replacement
Type Designator: IR4026
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 150
Package: TO3
IR4026 Substitution
- BJT ⓘ Cross-Reference Search
IR4026 datasheet
SiR402DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.006 at VGS = 10 V TrenchFET Power MOSFET 35 30 12 nC 100 % Rg Tested 0.008 at VGS = 4.5 V 35 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS S ... See More ⇒
Detailed specifications: IR2500, IR2501, IR2700, IR2701, IR3000, IR3001, IR4010, IR4025, A733, IR4039, IR4040, IR4041, IR4045, IR4046, IR4047, IR4050, IR4055
Keywords - IR4026 pdf specs
IR4026 cross reference
IR4026 equivalent finder
IR4026 pdf lookup
IR4026 substitution
IR4026 replacement
History: 2N539A
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
tip41c transistor datasheet | 2n3907 | 12n60 | mp42b transistor | c1675 transistor | c5198 transistor | ru7088r | 2sa733 replacement