IR4047 Datasheet. Specs and Replacement
Type Designator: IR4047 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 400
Package: TO3
IR4047 Substitution
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IR4047 datasheet
New Product SiR404DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.00160 at VGS = 10 V 60 TrenchFET Gen III Power MOSFET 0.00175 at VGS = 4.5 V 20 60 64.5 nC 100 % Rg Tested 0.00225 at VGS = 2.5 V 60 100 % UIS Tested 2.5 V and 3.... See More ⇒
Detailed specifications: IR4010, IR4025, IR4026, IR4039, IR4040, IR4041, IR4045, IR4046, A940, IR4050, IR4055, IR4059, IR4502, IR6001, IR645, IR646, IR647
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