IR4047 Datasheet, Equivalent, Cross Reference Search
Type Designator: IR4047
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: TO3
IR4047 Transistor Equivalent Substitute - Cross-Reference Search
IR4047 Datasheet (PDF)
9.1. Size:337K vishay
sir404dp.pdf
sir404dp.pdf
New ProductSiR404DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.00160 at VGS = 10 V 60 TrenchFET Gen III Power MOSFET0.00175 at VGS = 4.5 V 20 60 64.5 nC 100 % Rg Tested0.00225 at VGS = 2.5 V 60 100 % UIS Tested 2.5 V and 3.
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2SA1015 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
