All Transistors. 2N3851 Datasheet

 

2N3851 Datasheet and Replacement


   Type Designator: 2N3851
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 125 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO59
 

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2N3851 Datasheet (PDF)

 9.1. Size:58K  fairchild semi
 2n3859a.pdf pdf_icon

2N3851

2N3859ANPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO C

 9.2. Size:154K  no
 2n3858.pdf pdf_icon

2N3851

 9.3. Size:1285K  sprague
 2n3711 2n3721 2n3827 2n3858 2n3858a 2n3859 2n3859a 2n3860 2n3877 2n3877a 2n3900 2n3900a 2n3901 2n3903 2n3904 2n3905.pdf pdf_icon

2N3851

Datasheet: 2N3845 , 2N3845A , 2N3846 , 2N3847 , 2N3848 , 2N3849 , 2N385 , 2N3850 , 2SC1740 , 2N3852 , 2N3853 , 2N3854 , 2N3854A , 2N3855 , 2N3855A , 2N3856 , 2N3856A .

History: 2DI75Z-120 | BC847BVC

Keywords - 2N3851 transistor datasheet

 2N3851 cross reference
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