J596 Specs and Replacement
Type Designator: J596
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.675 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO22
J596 Substitution
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J596 datasheet
Ordering number ENN6979 2SJ596 P-Channel Silicon MOSFET 2SJ596 DC / DC Converter Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ596] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ596] 6.5 2.3 ... See More ⇒
Detailed specifications: J583, J584, J585, J586, J587, J588, J589, J594, D882, J623, J624, J625, J626, J627, J628, J629, J630
Keywords - J596 pdf specs
J596 cross reference
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