JC501Q Datasheet and Replacement
Type Designator: JC501Q
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 85 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO92
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JC501Q Datasheet (PDF)
jc501 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186JC501NPN general purpose transistor1999 Apr 27Product specificationSupersedes data of 1997 Mar 17Philips Semiconductors Product specificationNPN general purpose transistor JC501FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 collectorAPPLICATIONS3 emitter
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RN2111ACT | BUR607D | MJ16018-1400V | 2SC371R | L9015SLT3G | DMC5610N | MJ13332
Keywords - JC501Q transistor datasheet
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History: RN2111ACT | BUR607D | MJ16018-1400V | 2SC371R | L9015SLT3G | DMC5610N | MJ13332



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