All Transistors. 2N3858 Datasheet

 

2N3858 Datasheet and Replacement


   Type Designator: 2N3858
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92
 

 2N3858 Substitution

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2N3858 Datasheet (PDF)

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2N3858

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2N3858

2N3859ANPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO C

Datasheet: 2N3853 , 2N3854 , 2N3854A , 2N3855 , 2N3855A , 2N3856 , 2N3856A , 2N3857 , 2SC5200 , 2N3858A , 2N3859 , 2N3859A , 2N385A , 2N386 , 2N3860 , 2N3860A , 2N3861 .

History: 2SA889 | 2N2891SM | 2SC1158 | 2N2246

Keywords - 2N3858 transistor datasheet

 2N3858 cross reference
 2N3858 equivalent finder
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