All Transistors. 2N3858A Datasheet

 

2N3858A Datasheet and Replacement


   Type Designator: 2N3858A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92
 

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2N3858A Datasheet (PDF)

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 2n3711 2n3721 2n3827 2n3858 2n3858a 2n3859 2n3859a 2n3860 2n3877 2n3877a 2n3900 2n3900a 2n3901 2n3903 2n3904 2n3905.pdf pdf_icon

2N3858A

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 2n3858.pdf pdf_icon

2N3858A

 9.1. Size:58K  fairchild semi
 2n3859a.pdf pdf_icon

2N3858A

2N3859ANPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO C

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N2925 | 16924 | 2N306

Keywords - 2N3858A transistor datasheet

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 2N3858A equivalent finder
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