K2101 Specs and Replacement
Type Designator: K2101
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO50
K2101 Substitution
- BJT ⓘ Cross-Reference Search
K2101 datasheet
N-channel MOS-FET 2SK2101-01MR FAP-IIA Series 800V 2,1 6A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ... See More ⇒
SEMICONDUCTOR FTK2101 TECHNICAL DATA 20V P-Channel Enhancement-Mode MOSFET FEATURE 3 Leading Trench Technology for Low RDS(on) Extending Battery Life 2 1 SOT 323 APPLICATIONS High Side Load Switch Charging Circuit 3 D Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc G 1 S 2 MARKING TS1 Maximum ratings (Ta=25 unless otherwise n... See More ⇒
Detailed specifications: JE9215C, JF494, JO1006, JO2015A, JO3020, JO4036, JO4045, JO4075, 2SC5200, K2101A, K2101B, K2102, K2102A, K2102B, K2103, K2103A, K2103B
Keywords - K2101 pdf specs
K2101 cross reference
K2101 equivalent finder
K2101 pdf lookup
K2101 substitution
K2101 replacement
