All Transistors. K2101A Datasheet

 

K2101A Datasheet and Replacement


   Type Designator: K2101A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1400 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO50
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K2101A Datasheet (PDF)

 9.1. Size:175K  fuji
 2sk2101 01mr.pdf pdf_icon

K2101A

N-channel MOS-FET2SK2101-01MRFAP-IIA Series 800V 2,1 6A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

 9.2. Size:162K  first silicon
 ftk2101.pdf pdf_icon

K2101A

SEMICONDUCTORFTK2101TECHNICAL DATA20V P-Channel Enhancement-Mode MOSFET FEATURE 3Leading Trench Technology for Low RDS(on) Extending Battery Life 21SOT323APPLICATIONS High Side Load Switch Charging Circuit 3D Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc G1S2MARKING: TS1 Maximum ratings (Ta=25 unless otherwise n

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History: ECG332 | 2N2904 | DTC124EEB | ECG185 | 2SA1488 | NXP3875G | 2N5784

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