K2103B Datasheet, Equivalent, Cross Reference Search
Type Designator: K2103B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1700 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO50
K2103B Transistor Equivalent Substitute - Cross-Reference Search
K2103B Datasheet (PDF)
2sk2103.pdf
TransistorsSmall switching (30V, 2A)2SK2103FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Low-voltage drive (4V).5) Easily designed drive circuits.6) Easy to use in parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications98Transistors 2SK
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