K2108B Datasheet. Specs and Replacement

Type Designator: K2108B  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 1700 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO50

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K2108B datasheet

 9.1. Size:92K  sanyo

2sk2108.pdf pdf_icon

K2108B

Ordering number ENN4602A N-Channel Silicon MOSFET 2SK2108 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2108] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO ... See More ⇒

 9.2. Size:214K  inchange semiconductor

2sk2108.pdf pdf_icon

K2108B

isc N-Channel MOSFET Transistor 2SK2108 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V D... See More ⇒

Detailed specifications: K2106, K2106A, K2106B, K2107, K2107A, K2107B, K2108, K2108A, TIP42C, K2109, K2109A, K2109B, K2110, K2110A, K2110B, K2111, K2111A

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