K2109B Datasheet. Specs and Replacement

Type Designator: K2109B  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 1700 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO72

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K2109B datasheet

 9.1. Size:38K  nec

 2sk2109.pdf pdf_icon

K2109B

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2109 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS (in mm) is a switching element that can be directly driven by the output of 4.5 0.1 an IC operating at 5 V. 1.5 0.1 1.6 0.2 This product has a low ON resistance and superb switching characteristics and is ide... See More ⇒

 9.2. Size:672K  kexin

 2sk2109.pdf pdf_icon

K2109B

SMD Type MOSFET N-Channel MOSFET 2SK2109 1.70 0.1 Features VDS (V) = 60V ID = 0.5A RDS(ON) 1 (VGS = 4V) 0.42 0.1 0.46 0.1 Drain (D) RDS(ON) 0.8 (VGS = 10V) Gate (G) Internal diode 1.Gate Gate protection 2.Drain diode 3.Source Source (S) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V ... See More ⇒

Detailed specifications: K2107, K2107A, K2107B, K2108, K2108A, K2108B, K2109, K2109A, A1941, K2110, K2110A, K2110B, K2111, K2111A, K2111B, K2112A, K2112B

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