K2110 Datasheet. Specs and Replacement
Type Designator: K2110 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO72
K2110 Substitution
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K2110 datasheet
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2110 N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK2110 is a N-channel MOSFET of a vertical type 4.5 0.1 and is a switching element that can be directly driven by the output of an IC operating at 5 V. 1.6 0.2 1.5 0.1 This product has a low on-state resistance and superb switching charact... See More ⇒
SMD Type MOSFET N-Channel MOSFET 2SK2110 1.70 0.1 Features VDS (V) = 100V ID = 0.5 A Drain (D) 0.42 0.1 0.46 0.1 RDS(ON) 1.2 (VGS = 10V) RDS(ON) 1.5 (VGS = 4V) Gate (G) 1.Gate Internal diode 2.Drain Gate 3.Source protection diode Source (S) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 10... See More ⇒
Detailed specifications: K2107A, K2107B, K2108, K2108A, K2108B, K2109, K2109A, K2109B, TIP31C, K2110A, K2110B, K2111, K2111A, K2111B, K2112A, K2112B, K2113A
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