K2116A Datasheet. Specs and Replacement
Type Designator: K2116A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1400 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO72
K2116A Substitution
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K2116A datasheet
2SK2116, 2SK2117 Silicon N-Channel MOS FET ADE-208-1347 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2116, 2SK2117 Ordering Information Type No. VD... See More ⇒
isc N-Channel MOSFET Transistor 2SK2116 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V D... See More ⇒
Detailed specifications: K2112B, K2113A, K2113B, K2114A, K2114B, K2115, K2115A, K2115B, B772, K2116B, K2117A, K2117B, K2118, K2118A, K2118B, K2119, K2119A
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