All Transistors. K2116B Datasheet

 

K2116B Datasheet and Replacement


   Type Designator: K2116B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1700 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO72
 
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K2116B Datasheet (PDF)

 9.1. Size:32K  hitachi
 2sk2116 2sk2117.pdf pdf_icon

K2116B

2SK2116, 2SK2117Silicon N-Channel MOS FETADE-208-1347 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulatorOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2116, 2SK2117Ordering InformationType No. VD

 9.2. Size:213K  inchange semiconductor
 2sk2116.pdf pdf_icon

K2116B

isc N-Channel MOSFET Transistor 2SK2116DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VD

Datasheet: K2113A , K2113B , K2114A , K2114B , K2115 , K2115A , K2115B , K2116A , BC546 , K2117A , K2117B , K2118 , K2118A , K2118B , K2119 , K2119A , K2119B .

Keywords - K2116B transistor datasheet

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