K2127 Datasheet. Specs and Replacement
Type Designator: K2127 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO72
K2127 Substitution
- BJT ⓘ Cross-Reference Search
K2127 datasheet
Power F-MOS FETs 2SK2127 2SK2127 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 130mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 30V guaranteed 3.2 0.1 High-speed switching tf= 60ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor driv... See More ⇒
Detailed specifications: K2124A, K2124B, K2125, K2125A, K2125B, K2126, K2126A, K2126B, TIP2955, K2127A, K2127B, K2501, K4-525, K9015, KC147, KC148, KC149
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