KD503 Datasheet. Specs and Replacement
Type Designator: KD503 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO3
KD503 Substitution
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KD503 datasheet
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SKD503T, SKSS042N10N ( ) SkyMOS1 N-MOSFET 100V, 3.6m , 120A Features Product Summary Uses CRM(CQ) advanced SkyMOS1 technology Extremely low on-resistance RDS(on) VDS 100V Excellent QgxRDS(on) product(FOM) RDS(on) 3.6m ID Qualified according to JEDEC criteria 120A Applications Motor control and drive 100% Avalanche Tested 100%... See More ⇒
Detailed specifications: KD367B, KD3772, KD3773, KD3773T, KD4025, KD4348, KD501, KD502, BC546, KD5527, KD6001, KD601, KD602, KD605, KD606, KD607, KD615
Keywords - KD503 pdf specs
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