2N3877A Datasheet and Replacement
Type Designator: 2N3877A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 85 V
Maximum Collector-Emitter Voltage |Vce|: 85 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
2N3877A Substitution
2N3877A Datasheet (PDF)
2n3711 2n3721 2n3827 2n3858 2n3858a 2n3859 2n3859a 2n3860 2n3877 2n3877a 2n3900 2n3900a 2n3901 2n3903 2n3904 2n3905.pdf

2n3879smd05.pdf

2N3879SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 75V IC = 7A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm
2n3879smd.pdf

2N3879SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 75V IC = 7A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
Datasheet: 2N3867 , 2N3867SM , 2N3868 , 2N3868SM , 2N3869 , 2N387 , 2N3876 , 2N3877 , TIP122 , 2N3878 , 2N3879 , 2N3879SM , 2N388 , 2N3880 , 2N3881 , 2N3883 , 2N388A .
Keywords - 2N3877A transistor datasheet
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