All Transistors. 2N3878 Datasheet

 

2N3878 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N3878
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 175 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO5

 2N3878 Transistor Equivalent Substitute - Cross-Reference Search

   

2N3878 Datasheet (PDF)

 ..1. Size:185K  inchange semiconductor
2n3878.pdf

2N3878 2N3878

isc Silicon NPN Power Transistor 2N3878DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high speed switching and linear- amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 9.1. Size:413K  no
2n3879.pdf

2N3878 2N3878

 9.2. Size:10K  semelab
2n3879smd05.pdf

2N3878

2N3879SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 75V IC = 7A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm

 9.3. Size:10K  semelab
2n3879smd.pdf

2N3878

2N3879SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 75V IC = 7A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

 9.5. Size:185K  inchange semiconductor
2n3879.pdf

2N3878 2N3878

isc Silicon NPN Power Transistor 2N3879DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high speed switching and linear- amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

Datasheet: 2N3867SM , 2N3868 , 2N3868SM , 2N3869 , 2N387 , 2N3876 , 2N3877 , 2N3877A , 2N3906 , 2N3879 , 2N3879SM , 2N388 , 2N3880 , 2N3881 , 2N3883 , 2N388A , 2N389 .

 

 
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