2N3904 Datasheet, Equivalent, Cross Reference Search

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N3903/DGeneral Purpose Transistors2N3903NPN Silicon*2N3904*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N3904NPN switching transistor1999 Apr 23Product specificationSupersedes data of 1997 Jul 15Philips Semiconductors Product specificationNPN switching transistor 2N3904FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter High-spe

2N3904SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / Shipment2N3904 2N3904 TO-92 / Bulk2N3904-AP 2N3904 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS2N3906TO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT

October 20112N3904 / MMBT3904 / PZT3904NPN General Purpose AmplifierFeatures This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.2N3904 PZT3904MMBT3904CCEECBTO-92 SOT-23 SOT-223BMark:1AEBCAbsolute Maximum Ratings* Ta = 25C unless otherwise noted Symb

2N3904 MMBT3904 PZT3904CCEECC TO-92BBSOT-23 BESOT-223Mark: 1ANPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage

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MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2N3904Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability ratingPurpose Am

NPN General - PurposeAmplifier2N3904DescriptionThis device is designed as a general-purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to www.onsemi.com100 MHz as an amplifier.MAXIMUM RATINGS(Values are at TA = 25C unless otherwise noted.) (Note 1, Note 2)Symbol Parameter Value UnitVCEO Collector-Emitter Voltage 40 VVCBO Collector-Bas

2N3903, 2N3904General PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 40 Vdc1Collector-Base Voltage VCBO 60 VdcEMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 200 mAdcTotal Device Dissipation PD@ TA = 25

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to 2N3906 FEATURES ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32N3904L-AB3-R 2N3904G-AB3-R SOT-89 B C E Tape Reel2N3904L-T92-B 2N3904G-T92-B TO-92 E B C

2N3904NPN Silicon TransistorDescriptions PIN Connection General small signal application C Switching application Features B Low collector saturation voltage Collector output capacitance E Complementary pair with 2N3906 TO-92 Ordering Information Type NO. Marking Package Code 2N3904 2N3904 TO-92 Absolute maximum ratings Ta=25C Charact

2N3904 0.2A, 60V NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW (Ta=25C) G H1Emitter 111 Collector Current ICM: 200mA 2Base 222 Collector Base Voltage V(BR)CBO: 60V 3Collector 333JA DCLASSIFICATION OF hFE(1) Mi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN) TO-92 FEATURE NPN silicon epitaxial planar transistor for switching and 1. EMITTER Amplifier applications 2. BASE As complementary type, the PNP transistor 2N3906 is Recommended 3. COLLECTOR This transistor is also available in the SOT-23 case wit

SEMICONDUCTOR 2N3904TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=50nA(Max.), IBL=50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=30V, VEB=3V. GC 3.70 MAXDExcellent DC Current Gain Linearity.D 0.45E 1.00Low Saturation Voltage F 1.27G 0.85: VCE(sat)=0.3V(Max.)

2N3904(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 MAXIMUM RATINGS (TA=25 unless otherwise note

2N3904NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60VdcEmitter-Base VOltage VEBO6.0 VdcCollector Current IC200 mAdcPD 625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Tempera

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906 Lead-free: 2N3904L Halogen-free:2N3904G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Fre

2N3904 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Low current, Low voltage. / Applications General purpose amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1

2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors 2N3905 and 2N3906 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol

SEMICONDUCTOR2N3904TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emi

2N3904 / DescriptionsTO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features / ApplicationsLow current, Low voltage.General purpose amplifier. / Equivalent Circuit / Pinning123PIN1Collector PIN 2Base PIN 3Emitter

2N3904NPN / Pinning / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. PIN1Collector / Features PIN 2Base 1PIN 3Emitter 23 Low current, Low voltage. / Equivalent Circuit / Applications

TITAN MICRO TITAN MICRO2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistorfor switching and amplifier applications. As complementary types the PNP transistors 2N3905 and 2N3906 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

2N3904NSemiconductor Semiconductor NPN Silicon TransistorDescriptions General small signal application Switching application Features Low collector saturation voltage : VCE(sat)=0.3V(MAX.) @ IC=50mA, IB=5mA Low collector output capacitance : Cob = 3pF(Typ.) @ VCB=5V, IE=0, f=1MHz Complementary pair with STA3906A Ordering Information Type NO. Mark

2N3904-T18 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230)5.31 (0.209)4.95 (0.195)4.52 (0.178)GENERAL PURPOSE HERMETIC NPN SILICON TRANSISTOR FEATURES SILICON NPN EPITAXIAL TRANSISTOR0.48 (0.019) HERMETIC TO18 PACKAGE 0.41 (0.016)dia. HI-REL SCREENING OPTIONS AVAILABLE HIGH SPEED SATURATED SWITCHING2.54 (0.100)Nom.APPLICATIONS A h

SEMICONDUCTOR 2N3904VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBFEATURESLow Leakage CurrentDIM MILLIMETERS2_: ICEX=50nA(Max.), IBL=50nA(Max.) A 1.2 +0.05_B 0.8 +0.05@VCE=30V, VEB=3V. 13_C 0.5 + 0.05_D 0.3 + 0.05Excellent DC Current Gain Linearity._E 1.2 + 0.05Low Saturation Voltage _G 0.8 0.05

SEMICONDUCTOR 2N3904ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBDIM MILLIMETERSFEATURES_+A 1.60 0.10DLow Leakage Current _+2 B 0.85 0.10_+C 0.70 0.10: ICEX=50nA(Max.), IBL=50nA(Max.)31D 0.27+0.10/-0.05_@VCE=30V, VEB=3V. E 1.60 0.10+_+1.00 0.10GExcellent DC Current Gain Linearity.H

SEMICONDUCTOR 2N3904ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=50nA(Max.), IBL=50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=30V, VEB=3V. GC 3.70 MAXDLow Saturation Voltage D 0.45E 1.00: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.F 1.27G 0.85Low Collector Outp

SEMICONDUCTOR 2N3904CTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Low Leakage CurrentN DIM MILLIMETERS: ICEX=50nA(Max.), IBL=50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=30V, VEB=3V. GC 3.70 MAXD Excellent DC Current Gain Linearity.D 0.45E 1.00 Low Saturation Voltage F 1.27G 0.85: VCE(sat)=0.3V(Ma

SEMICONDUCTOR 2N3904STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LDIM MILLIMETERSFEATURES _+A 2.93 0.20B 1.30+0.20/-0.15Low Leakage CurrentC 1.30 MAX23 D 0.40+0.15/-0.05: ICEX=50nA(Max.), IBL=50nA(Max.)E 2.40+0.30/-0.201@VCE=30V, VEB=3V.G 1.90H 0.95Excellent DC Current Gain Linearity.J 0.13+

SEMICONDUCTOR 2N3904UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2Low Leakage Current _+B 1.25 0.15_+C 0.90 0.10: ICEX=50nA(Max.), IBL=50nA(Max.)31D 0.3+0.10/-0.05_E +2.10 0.20@VCE=30V, VEB=3V.G 0.65Excellent DC Current Gain Linearity.H 0.15+0

SEMICONDUCTOR 2N3904SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESLow Leakage Current: ICEX=50nA(Max.), IBL=50nA(Max.)@VCE=30V, VEB=3V.Excellent DC Current Gain Linearity.Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.Complementary to 2N3906SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMB

Spec. No. : HE6218HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2005.01.14MICROELECTRONICS CORP.Page No. : 1/5H2N3904NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N3904 is designed for general purpose switching and amplifier applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature......................................................

SEMICONDUCTOR2N3904STECHNICAL DATAGeneral Purpose Transistor We declare that the material of product compliance with RoHS requirements.ORDERING INFORMATIONDevice Marking Shipping32N3904S 1AM 3000/Tape & Reel21MAXIMUM RATINGSSOT23Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 60 Vdc3COLLECTOREmitterBase Vo

SEMICONDUCTOR2N3904TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emi

SEMICONDUCTOR2N3904UTECHNICAL DATAGeneral Purpose Transistor We declare that the material of product compliance with RoHS requirements.ORDERING INFORMATION3Device Marking ShippingAM2N3904U 3000/Tape & Reel12SC-70 / SOT 323 MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 40 Vdc3COLLECTORCollectorBase Voltage VCBO 60 Vdc1Emi

Plastic-Encapsulate Transistors TRANSISTOR (NPN)FEATURES U Compliment to 2N3906 Low current Low voltage MARKING: 1A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.