KSA812 Datasheet. Specs and Replacement
Type Designator: KSA812
SMD Transistor Code: D1G_D1L_D1O_D1Y
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: TO236
KSA812 Substitution
- BJT ⓘ Cross-Reference Search
KSA812 datasheet
KSA812 Low Frequency Amplifier Collector-Base Voltage VCBO= -60V 3 Complement to KSC1623 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Cur... See More ⇒
Detailed specifications: KSA709R, KSA709Y, KSA733, KSA733G, KSA733L, KSA733O, KSA733R, KSA733Y, 431, KSA812G, KSA812L, KSA812O, KSA812Y, KSA910, KSA910O, KSA910R, KSA910Y
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